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1. Identity statement
Reference TypeJournal Article
Sitemtc-m21c.sid.inpe.br
Holder Codeisadg {BR SPINPE} ibi 8JMKD3MGPCW/3DT298S
Identifier8JMKD3MGP3W34R/3UA38LL
Repositorysid.inpe.br/mtc-m21c/2019/10.25.11.36   (restricted access)
Last Update2019:10.25.11.36.04 (UTC) administrator
Metadata Repositorysid.inpe.br/mtc-m21c/2019/10.25.11.36.04
Metadata Last Update2020:01.07.18.01.11 (UTC) administrator
DOI10.1021/acs.jpcc.9b05377
ISSN1932-7447
Citation KeyMorelhãoKyNeFoRaAb:2019:DyDeVa
TitleDynamics of defects in van der Waals epitaxy of bismuth telluride topological insulators
Year2019
MonthOct.
Access Date2024, May 18
Type of Workjournal article
Secondary TypePRE PI
Number of Files1
Size2083 KiB
2. Context
Author1 Morelhão, Sérgio L.
2 Kycia, Stefan W.
3 Netzke, Samuel
4 Fornari, Celso Israel
5 Rappl, Paulo Henrique de Oliveira
6 Abramof, Eduardo
Resume Identifier1
2
3
4
5 8JMKD3MGP5W/3C9JJ37
6 8JMKD3MGP5W/3C9JGUH
Group1
2
3
4 CMS-ETES-SESPG-INPE-MCTIC-GOV-BR
5 LABAS-COCTE-INPE-MCTIC-GOV-BR
6 LABAS-COCTE-INPE-MCTIC-GOV-BR
Affiliation1 University of Guelph
2 University of Guelph
3 Universidade de São Paulo (USP)
4 Instituto Nacional de Pesquisas Espaciais (INPE)
5 Instituto Nacional de Pesquisas Espaciais (INPE)
6 Instituto Nacional de Pesquisas Espaciais (INPE)
Author e-Mail Address1
2
3
4 celso.fornari@inpe.br
5 paulo.rappl@inpe.br
6 eduardo.abramof@inpe.br
JournalJournal of Physical Chemistry C
Volume123
Number40
Pages24818-24825
History (UTC)2019-10-25 11:36:31 :: simone -> administrator :: 2019
2020-01-07 18:01:11 :: administrator -> simone :: 2019
3. Content and structure
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Transferable1
Content TypeExternal Contribution
Version Typepublisher
AbstractPotential applications in spintronics and quantum information processing have motivated much recent research in epitaxial films of bismuth telluride. This system is also an example of van der Waals (vdW) epitaxy, where the interface coherence between the film and substrate is based on vdW bonds instead of strong ionic or covalent bonds. Because of the weakness of the vdW bonds, the overall quality of the epitaxial films is difficult to control and structural defects are easily introduced with a significant impact on the electronic phase diagram of the epitaxial films. To elucidate the evolution of defects as a function of the growth parameters, we combine nondestructive methods for electrical and structural analysis, as well as to establish intercorrelations between structural features and density of free charge carriers. It clearly shows that point defects and twinned domains favor p-type of charge carriers. Passivation of points defects by formation of metallic bismuth bilayers (BLs) drastically changes the whole film properties. By replacing vdW bonds with weak covalent bonds, the presence of BLs increases the film stiffness, leading to a smaller lattice misfit and a larger lateral lattice coherence length. Charge carriers are flipped to n-type. A few percent of BLs can be a strategy to achieve films with enhanced performance for device applications.
AreaFISMAT
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Next Higher Units8JMKD3MGPCW/3ESR3H2
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DisseminationWEBSCI; PORTALCAPES; SCOPUS.
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6. Notes
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